AP18T10GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP18T10GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: SO8

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AP18T10GM-HF datasheet

 ..1. Size:94K  ape
 ap18t10gm-hf.pdf pdf_icon

AP18T10GM-HF

AP18T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 160m Surface Mount Package ID 3A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T10GM-HF

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 6.2. Size:97K  ape
 ap18t10gh j-hf.pdf pdf_icon

AP18T10GM-HF

AP18T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combinatio

 6.3. Size:96K  ape
 ap18t10gh ap18t10gj.pdf pdf_icon

AP18T10GM-HF

AP18T10GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

MOSTRAR MÁS

Otros transistores... AP18P10GM-HF, AP18P10GS, AP18T10AGH-HF, AP18T10AGJ-HF, AP18T10AGK-HF, AP18T10GH-HF, AP18T10GI, AP18T10GJ-HF, IRFZ44N, AP18T10GP, AP18T20GH-HF, AP18T20GI-HF, AP1R803GMT-HF, AP1RA03GMT-HF, AP1RC03GMT-HF, 2SK357, 2SK359