All MOSFET. AP18T10GM-HF Datasheet

 

AP18T10GM-HF Datasheet and Replacement


   Type Designator: AP18T10GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SO8
 

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AP18T10GM-HF Datasheet (PDF)

 ..1. Size:94K  ape
 ap18t10gm-hf.pdf pdf_icon

AP18T10GM-HF

AP18T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 160m Surface Mount Package ID 3AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 6.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T10GM-HF

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

 6.2. Size:97K  ape
 ap18t10gh j-hf.pdf pdf_icon

AP18T10GM-HF

AP18T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combinatio

 6.3. Size:96K  ape
 ap18t10gh ap18t10gj.pdf pdf_icon

AP18T10GM-HF

AP18T10GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig

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Datasheet: AP18P10GM-HF , AP18P10GS , AP18T10AGH-HF , AP18T10AGJ-HF , AP18T10AGK-HF , AP18T10GH-HF , AP18T10GI , AP18T10GJ-HF , IRFZ44N , AP18T10GP , AP18T20GH-HF , AP18T20GI-HF , AP1R803GMT-HF , AP1RA03GMT-HF , AP1RC03GMT-HF , 2SK357 , 2SK359 .

History: 2SK3484-Z | FQU2N60CTU | GSM2330 | 2SK2993S

Keywords - AP18T10GM-HF MOSFET datasheet

 AP18T10GM-HF cross reference
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