AP18T20GH-HF Todos los transistores

 

AP18T20GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18T20GH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 66 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
   Paquete / Cubierta: TO252
 

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AP18T20GH-HF Datasheet (PDF)

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AP18T20GH-HF

AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo

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ap18t20gh.pdf pdf_icon

AP18T20GH-HF

AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo

 6.1. Size:75K  ape
ap18t20gi-hf.pdf pdf_icon

AP18T20GH-HF

AP18T20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionAP18T20 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

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ap18t10gi.pdf pdf_icon

AP18T20GH-HF

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

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History: AP15T20GI-HF | PPM523T201E0 | BUK7K17-60E

 

 
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