AP18T20GH-HF Specs and Replacement

Type Designator: AP18T20GH-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: TO252

AP18T20GH-HF substitution

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AP18T20GH-HF datasheet

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 ap18t20gh-hf.pdf pdf_icon

AP18T20GH-HF

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo... See More ⇒

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 ap18t20gh.pdf pdf_icon

AP18T20GH-HF

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo... See More ⇒

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 ap18t20gi-hf.pdf pdf_icon

AP18T20GH-HF

AP18T20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

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 ap18t10gi.pdf pdf_icon

AP18T20GH-HF

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒

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Detailed specifications: AP18T10AGH-HF, AP18T10AGJ-HF, AP18T10AGK-HF, AP18T10GH-HF, AP18T10GI, AP18T10GJ-HF, AP18T10GM-HF, AP18T10GP, IRF740, AP18T20GI-HF, AP1R803GMT-HF, AP1RA03GMT-HF, AP1RC03GMT-HF, 2SK357, 2SK359, 2SK360, 2SK3611

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