AP18T20GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP18T20GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 66 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET AP18T20GI-HF

AP18T20GI-HF Datasheet (PDF)

..1. Size:75K ape
ap18t20gi-hf.pdf

AP18T20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionAP18T20 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

6.1. Size:75K ape
ap18t20gh-hf.pdf

AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo

6.2. Size:197K ape
ap18t20gh.pdf

9.1. Size:94K ape
ap18t10gi.pdf

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

9.2. Size:97K ape
ap18t10gh j-hf.pdf

AP18T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combinatio

9.3. Size:96K ape
ap18t10gh ap18t10gj.pdf

AP18T10GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig

9.4. Size:96K ape
ap18t10aghj-hf.pdf

AP18T10AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast

9.5. Size:90K ape
ap18t10agk-hf.pdf

AP18T10AGK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 2.8AG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast swit

9.6. Size:94K ape
ap18t10gp.pdf

AP18T10GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

9.7. Size:94K ape
ap18t10gm-hf.pdf

AP18T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 160m Surface Mount Package ID 3AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

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