AP18T20GI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP18T20GI-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm

Encapsulados: TO220F

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AP18T20GI-HF datasheet

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 ap18t20gi-hf.pdf pdf_icon

AP18T20GI-HF

AP18T20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 6.1. Size:75K  ape
 ap18t20gh-hf.pdf pdf_icon

AP18T20GI-HF

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo

 6.2. Size:197K  ape
 ap18t20gh.pdf pdf_icon

AP18T20GI-HF

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo

 9.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T20GI-HF

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

MOSTRAR MÁS

Otros transistores... AP18T10AGJ-HF, AP18T10AGK-HF, AP18T10GH-HF, AP18T10GI, AP18T10GJ-HF, AP18T10GM-HF, AP18T10GP, AP18T20GH-HF, IRF840, AP1R803GMT-HF, AP1RA03GMT-HF, AP1RC03GMT-HF, 2SK357, 2SK359, 2SK360, 2SK3611, 2SK3614