AP18T20GI-HF Todos los transistores

 

AP18T20GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18T20GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
   Paquete / Cubierta: TO220F
 

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AP18T20GI-HF Datasheet (PDF)

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 ap18t20gi-hf.pdf pdf_icon

AP18T20GI-HF

AP18T20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionAP18T20 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

 6.1. Size:75K  ape
 ap18t20gh-hf.pdf pdf_icon

AP18T20GI-HF

AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo

 6.2. Size:197K  ape
 ap18t20gh.pdf pdf_icon

AP18T20GI-HF

AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo

 9.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T20GI-HF

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

MOSTRAR MÁS

Otros transistores... AP18T10AGJ-HF , AP18T10AGK-HF , AP18T10GH-HF , AP18T10GI , AP18T10GJ-HF , AP18T10GM-HF , AP18T10GP , AP18T20GH-HF , IRF840 , AP1R803GMT-HF , AP1RA03GMT-HF , AP1RC03GMT-HF , 2SK357 , 2SK359 , 2SK360 , 2SK3611 , 2SK3614 .

History: GSM2309A

 

 
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