AP18T20GI-HF. Аналоги и основные параметры

Наименование производителя: AP18T20GI-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 32.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

Cossⓘ - Выходная емкость: 130 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm

Тип корпуса: TO220F

Аналог (замена) для AP18T20GI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP18T20GI-HF даташит

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AP18T20GI-HF

AP18T20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lo

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ap18t20gh-hf.pdfpdf_icon

AP18T20GI-HF

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo

 6.2. Size:197K  ape
ap18t20gh.pdfpdf_icon

AP18T20GI-HF

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo

 9.1. Size:94K  ape
ap18t10gi.pdfpdf_icon

AP18T20GI-HF

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

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