2SK359 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK359
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 5 V
|Id|ⓘ - Corriente continua
de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1.6 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 125 Ohm
Encapsulados: TO92
Búsqueda de reemplazo de 2SK359 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK359 datasheet
..1. Size:31K hitachi
2sk359.pdf 
2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSX*1 20 V Gate to source voltage VGSS 5V Drain current ID 30 mA Gate current IG 1mA Channel power dissipation Pch 400 mW Channel temperature Tch 150 C Storage t
0.1. Size:102K fuji
2sk3594-01.pdf
2SK3594-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.2. Size:93K fuji
2sk3598-01.pdf
2SK3598-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.3. Size:102K fuji
2sk3593-01.pdf
2SK3593-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Foot Print Pattern Absolute maximum ratings (
0.4. Size:99K fuji
2sk3591-01mr.pdf
2SK3591-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.5. Size:252K fuji
2sk3592-01l-s-sj.pdf
2SK3592-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25
0.6. Size:98K fuji
2sk3590-01.pdf
2SK3590-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.7. Size:97K fuji
2sk3599-01mr.pdf
2SK3599-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.8. Size:106K fuji
2sk3597-01.pdf
2SK3597-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (T
0.9. Size:256K fuji
2sk3596-01l-s-sj.pdf
2SK3596-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.10. Size:103K fuji
2sk3595-01mr.pdf
2SK3595-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.11. Size:356K inchange semiconductor
2sk3596s.pdf
isc N-Channel MOSFET Transistor 2SK3596S FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 66m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.12. Size:289K inchange semiconductor
2sk3594-01.pdf
isc N-Channel MOSFET Transistor 2SK3594-01 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 66m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
0.13. Size:289K inchange semiconductor
2sk3598-01.pdf
isc N-Channel MOSFET Transistor 2SK3598-01 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
0.14. Size:253K inchange semiconductor
2sk3591.pdf
isc N-Channel MOSFET Transistor 2SK3591 FEATURES Drain-source on-resistance RDS(on) 41m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DS
0.15. Size:282K inchange semiconductor
2sk3592l.pdf
isc N-Channel MOSFET Transistor 2SK3592L FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 41m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.16. Size:356K inchange semiconductor
2sk3592s.pdf
isc N-Channel MOSFET Transistor 2SK3592S FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 41m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.17. Size:288K inchange semiconductor
2sk3590-01.pdf
isc N-Channel MOSFET Transistor 2SK3590-01 FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 41m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
0.18. Size:280K inchange semiconductor
2sk3599-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3599-01MR FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.19. Size:280K inchange semiconductor
2sk3595-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3595-01MR FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 66m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.20. Size:282K inchange semiconductor
2sk3596l.pdf
isc N-Channel MOSFET Transistor 2SK3596L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 66m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
Otros transistores... AP18T10GM-HF, AP18T10GP, AP18T20GH-HF, AP18T20GI-HF, AP1R803GMT-HF, AP1RA03GMT-HF, AP1RC03GMT-HF, 2SK357, IRFP460, 2SK360, 2SK3611, 2SK3614, 2SK3656, 2SK3663, 2SK3664, 2SK3668, 2SK367
