2SK359 Datasheet and Replacement
Type Designator: 2SK359
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Id| ⓘ - Maximum Drain Current: 0.03
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 1.6
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 125
Ohm
Package:
TO92
-
MOSFET ⓘ Cross-Reference Search
2SK359 Datasheet (PDF)
..1. Size:31K hitachi
2sk359.pdf 
2SK359Silicon N-Channel MOS FETApplicationVHF amplifierOutlineTO-92 (2)1. Gate2. Source3. Drain3212SK359Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSX*1 20 VGate to source voltage VGSS 5VDrain current ID 30 mAGate current IG 1mAChannel power dissipation Pch 400 mWChannel temperature Tch 150 CStorage t
0.1. Size:102K fuji
2sk3594-01.pdf
2SK3594-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
0.2. Size:93K fuji
2sk3598-01.pdf
2SK3598-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
0.3. Size:102K fuji
2sk3593-01.pdf
2SK3593-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicFoot Print PatternAbsolute maximum ratings(
0.4. Size:99K fuji
2sk3591-01mr.pdf
2SK3591-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
0.5. Size:252K fuji
2sk3592-01l-s-sj.pdf
2SK3592-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofSee to P4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25
0.6. Size:98K fuji
2sk3590-01.pdf
2SK3590-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
0.7. Size:97K fuji
2sk3599-01mr.pdf
2SK3599-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
0.8. Size:106K fuji
2sk3597-01.pdf
2SK3597-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings Foot Print Pattern(T
0.9. Size:256K fuji
2sk3596-01l-s-sj.pdf
2SK3596-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
0.10. Size:103K fuji
2sk3595-01mr.pdf
2SK3595-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
0.11. Size:356K inchange semiconductor
2sk3596s.pdf
isc N-Channel MOSFET Transistor 2SK3596SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.12. Size:289K inchange semiconductor
2sk3594-01.pdf
isc N-Channel MOSFET Transistor 2SK3594-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.13. Size:289K inchange semiconductor
2sk3598-01.pdf
isc N-Channel MOSFET Transistor 2SK3598-01FEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.14. Size:253K inchange semiconductor
2sk3591.pdf
isc N-Channel MOSFET Transistor 2SK3591FEATURES Drain-source on-resistance:RDS(on) 41m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDS
0.15. Size:282K inchange semiconductor
2sk3592l.pdf
isc N-Channel MOSFET Transistor 2SK3592LFEATURESDrain Current : I = 57A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 41m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.16. Size:356K inchange semiconductor
2sk3592s.pdf
isc N-Channel MOSFET Transistor 2SK3592SFEATURESDrain Current : I = 57A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 41m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.17. Size:288K inchange semiconductor
2sk3590-01.pdf
isc N-Channel MOSFET Transistor 2SK3590-01FEATURESDrain Current : I = 57A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 41m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.18. Size:280K inchange semiconductor
2sk3599-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3599-01MRFEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
0.19. Size:280K inchange semiconductor
2sk3595-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3595-01MRFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
0.20. Size:282K inchange semiconductor
2sk3596l.pdf
isc N-Channel MOSFET Transistor 2SK3596LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Datasheet: AP18T10GM-HF
, AP18T10GP
, AP18T20GH-HF
, AP18T20GI-HF
, AP1R803GMT-HF
, AP1RA03GMT-HF
, AP1RC03GMT-HF
, 2SK357
, IRF640
, 2SK360
, 2SK3611
, 2SK3614
, 2SK3656
, 2SK3663
, 2SK3664
, 2SK3668
, 2SK367
.
History: APM4534K
| PSMN1R2-25YLC
| PSMN030-150P
| AONS36312
| BLM12P03-R
| AONS66923
| APM8005K
Keywords - 2SK359 MOSFET datasheet
2SK359 cross reference
2SK359 equivalent finder
2SK359 lookup
2SK359 substitution
2SK359 replacement
