2SK377 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK377
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.0006 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1000 Ohm
Encapsulados: DP3
Búsqueda de reemplazo de 2SK377 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK377 datasheet
0.1. Size:106K fuji
2sk3773-01mr.pdf 
2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
0.2. Size:93K fuji
2sk3775.pdf
2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings (mm) 200406 Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) F o o t P r i n t DC-DC converters Equivalent circuit schematic Maximum ratings and characteristic
0.3. Size:146K fuji
2sk3774-01l-s-sj.pdf
2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T
0.4. Size:106K fuji
2sk3778.pdf
2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherw
0.5. Size:103K fuji
2sk3777.pdf
2SK3777-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless ot
0.6. Size:105K fuji
2sk3778-01.pdf
2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other
0.7. Size:96K fuji
2sk3771-01mr.pdf
2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
0.8. Size:92K fuji
2sk3770-01mr.pdf
2SK3770-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
0.9. Size:105K fuji
2sk3772-01.pdf
2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
0.10. Size:105K fuji
2sk3776-01.pdf
2SK3776-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other
0.11. Size:103K fuji
2sk3779.pdf
2SK3779-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless ot
0.12. Size:283K inchange semiconductor
2sk3774-01l.pdf
isc N-Channel MOSFET Transistor 2SK3774-01L FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.13. Size:357K inchange semiconductor
2sk3774-01s.pdf
isc N-Channel MOSFET Transistor 2SK3774-01S FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.14. Size:372K inchange semiconductor
2sk3778-01.pdf
isc N-Channel MOSFET Transistor 2SK3778-01 FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 53m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
0.15. Size:274K inchange semiconductor
2sk3779-01r.pdf
isc N-Channel MOSFET Transistor 2SK3779-01R FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 53m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
0.16. Size:289K inchange semiconductor
2sk3772-01.pdf
isc N-Channel MOSFET Transistor 2SK3772-01 FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
0.17. Size:357K inchange semiconductor
2sk3774-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3774-01SJ FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
Otros transistores... 2SK374, 2SK3740, 2SK3743, 2SK3749, 2SK3756, 2SK375L, 2SK375S, 2SK3761, IRF9540, 2SK3775-01, 2SK3777-01R, 2SK3778, AP20N15AGH-HF, AP20N15AGP-HF, AP20N15GH-HF, AP20N15GI-HF, AP20T03GH-HF
