2SK377 Datasheet and Replacement
Type Designator: 2SK377
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 0.0006
A
Tj ⓘ - Maximum Junction Temperature: 125
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000
Ohm
Package: DP3
-
MOSFET ⓘ Cross-Reference Search
2SK377 Datasheet (PDF)
0.1. Size:106K fuji
2sk3773-01mr.pdf 
2SK3773-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
0.2. Size:93K fuji
2sk3775.pdf
2SK3775-01N-CHANNEL SILICON POWER MOSFETFUJI POWER MOSFETOutline Drawings (mm) 200406Super FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breadownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)F o o t P r i n tDC-DC convertersEquivalent circuit schematicMaximum ratings and characteristic
0.3. Size:146K fuji
2sk3774-01l-s-sj.pdf
2SK3774-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T
0.4. Size:106K fuji
2sk3778.pdf
2SK3778-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breadownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherw
0.5. Size:103K fuji
2sk3777.pdf
2SK3777-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless ot
0.6. Size:105K fuji
2sk3778-01.pdf
2SK3778-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
0.7. Size:96K fuji
2sk3771-01mr.pdf
2SK3771-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
0.8. Size:92K fuji
2sk3770-01mr.pdf
2SK3770-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
0.9. Size:105K fuji
2sk3772-01.pdf
2SK3772-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
0.10. Size:105K fuji
2sk3776-01.pdf
2SK3776-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
0.11. Size:103K fuji
2sk3779.pdf
2SK3779-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless ot
0.12. Size:283K inchange semiconductor
2sk3774-01l.pdf
isc N-Channel MOSFET Transistor 2SK3774-01LFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
0.13. Size:357K inchange semiconductor
2sk3774-01s.pdf
isc N-Channel MOSFET Transistor 2SK3774-01SFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
0.14. Size:372K inchange semiconductor
2sk3778-01.pdf
isc N-Channel MOSFET Transistor 2SK3778-01FEATURESDrain Current : I = 59A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 53m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.15. Size:274K inchange semiconductor
2sk3779-01r.pdf
isc N-Channel MOSFET Transistor 2SK3779-01RFEATURESDrain Current : I = 59A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 53m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
0.16. Size:289K inchange semiconductor
2sk3772-01.pdf
isc N-Channel MOSFET Transistor 2SK3772-01FEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
0.17. Size:357K inchange semiconductor
2sk3774-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3774-01SJFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
Datasheet: 2SK374
, 2SK3740
, 2SK3743
, 2SK3749
, 2SK3756
, 2SK375L
, 2SK375S
, 2SK3761
, K3569
, 2SK3775-01
, 2SK3777-01R
, 2SK3778
, AP20N15AGH-HF
, AP20N15AGP-HF
, AP20N15GH-HF
, AP20N15GI-HF
, AP20T03GH-HF
.
History: GSM3400
Keywords - 2SK377 MOSFET datasheet
2SK377 cross reference
2SK377 equivalent finder
2SK377 lookup
2SK377 substitution
2SK377 replacement
