AP2301BGN-HF Todos los transistores

 

AP2301BGN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2301BGN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT23
 

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AP2301BGN-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap2301bgn-hf.pdf pdf_icon

AP2301BGN-HF

AP2301BGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130mD Surface Mount Device ID - 2.8A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 7.1. Size:1483K  cn apm
 ap2301bi.pdf pdf_icon

AP2301BGN-HF

AP2301BI -20V P-Channel Enhancement Mode MOSFET Description The AP2301BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-2.3A DS DR

 8.1. Size:93K  ape
 ap2301agn.pdf pdf_icon

AP2301BGN-HF

AP2301AGNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97mD Surface Mount Device ID - 3.3ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effec

 8.2. Size:56K  ape
 ap2301agn-hf.pdf pdf_icon

AP2301BGN-HF

AP2301AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,l

MOSTRAR MÁS

Otros transistores... AP20T03GJ-HF , AP20T03GT-HF , AP20T15GH-HF , AP20T15GI-HF , AP20T15GP-HF , AP22N13GH-HF , AP22T03GH-HF , AP2301AGN-HF , 12N60 , AP2301GN-HF , AP2301N-HF , AP2302AGN-HF , AP2302GN-HF , AP2303GN-HF , AP2304AGN-HF , AP2304GN-HF , AP2305AGN-HF .

History: SFF25P20S2I-01

 

 
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