AP2305AGN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2305AGN-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SOT23

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AP2305AGN-HF datasheet

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 ap2305agn-hf.pdf pdf_icon

AP2305AGN-HF

AP2305AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistan

 5.1. Size:59K  ape
 ap2305agn.pdf pdf_icon

AP2305AGN-HF

AP2305AGN Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G , low on-resistance and cos

 5.2. Size:866K  cn vbsemi
 ap2305agn.pdf pdf_icon

AP2305AGN-HF

AP2305AGN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2

 7.1. Size:1569K  cn apm
 ap2305ai.pdf pdf_icon

AP2305AGN-HF

AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS D R

MOSTRAR MÁS

Otros transistores... AP2301BGN-HF, AP2301GN-HF, AP2301N-HF, AP2302AGN-HF, AP2302GN-HF, AP2303GN-HF, AP2304AGN-HF, AP2304GN-HF, AON7506, AP2305BGN-HF, AP2305CGN-HF, AP2305GN-HF, AP2305N-HF, AP2306AGEN-HF, AP2306AGN-HF, AP2306CGN-HF, AP2306CGTN-HF