AP2305AGN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2305AGN-HF Datasheet (PDF)

..1. Size:79K ape
ap2305agn-hf.pdf pdf_icon

AP2305AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistan

5.1. Size:59K ape
ap2305agn.pdf pdf_icon

AP2305AGNPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G, low on-resistance and cos

5.2. Size:866K cn vbsemi
ap2305agn.pdf pdf_icon

AP2305AGNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

7.1. Size:1569K cn apm
ap2305ai.pdf pdf_icon

AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS DR

Otros transistores... AP2301BGN-HF , AP2301GN-HF , AP2301N-HF , AP2302AGN-HF , AP2302GN-HF , AP2303GN-HF , AP2304AGN-HF , AP2304GN-HF , AON7506 , AP2305BGN-HF , AP2305CGN-HF , AP2305GN-HF , AP2305N-HF , AP2306AGEN-HF , AP2306AGN-HF , AP2306CGN-HF , AP2306CGTN-HF .