Справочник MOSFET. AP2305AGN-HF

 

AP2305AGN-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP2305AGN-HF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для AP2305AGN-HF

 

 

AP2305AGN-HF Datasheet (PDF)

 ..1. Size:79K  ape
 ap2305agn-hf.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistan

 5.1. Size:59K  ape
 ap2305agn.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305AGNPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G, low on-resistance and cos

 5.2. Size:866K  cn vbsemi
 ap2305agn.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305AGNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

 8.1. Size:57K  ape
 ap2305cgn-hf.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305CGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 85m Surface Mount Device ID - 3.2AS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching,l

 8.2. Size:94K  ape
 ap2305bgn-hf.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305BGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65mD Surface Mount Device ID -4.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,low on-resistan

 8.3. Size:59K  ape
 ap2305n-hf.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305N-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID - 3.4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,lo

 8.4. Size:94K  ape
 ap2305gn-hf.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65mD Surface Mount Device ID - 4.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resis

 8.5. Size:642K  allpower
 ap2305.pdf

AP2305AGN-HF AP2305AGN-HF

 8.6. Size:868K  cn vbsemi
 ap2305gn.pdf

AP2305AGN-HF AP2305AGN-HF

AP2305GNwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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