AP2306CGTN-HF Todos los transistores

 

AP2306CGTN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2306CGTN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TSOT23
 

 Búsqueda de reemplazo de AP2306CGTN-HF MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP2306CGTN-HF Datasheet (PDF)

 ..1. Size:96K  ape
 ap2306cgtn-hf.pdf pdf_icon

AP2306CGTN-HF

AP2306CGTN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower On-resistance RDS(ON) 30m Surface Mount Package ID 5.5AS RoHS Compliant & Halogen-FreeTSOT-23GDDescriptionAP2306C series are from Advanced Power innovated design and siliconprocess technology to achieve t

 6.1. Size:93K  ape
 ap2306cgn-hf.pdf pdf_icon

AP2306CGTN-HF

AP2306CGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 30mD Surface mount package ID 5.5A RoHS CompliantSDSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on-resistance, extr

 8.1. Size:95K  ape
 ap2306agen-hf.pdf pdf_icon

AP2306CGTN-HF

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res

 8.2. Size:179K  ape
 ap2306agen.pdf pdf_icon

AP2306CGTN-HF

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res

MOSTRAR MÁS

Otros transistores... AP2305AGN-HF , AP2305BGN-HF , AP2305CGN-HF , AP2305GN-HF , AP2305N-HF , AP2306AGEN-HF , AP2306AGN-HF , AP2306CGN-HF , P0903BDG , AP2306GN-HF , AP2307GN-HF , 2SK3779-01R , 2SK3793 , 2SK3794 , 2SK3794-Z , 2SK385 , 2SK386 .

History: AP9478GM | AP9412AGH | AP9412CGM-HF

 

 
Back to Top

 


 
.