2SK3936 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3936
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 23 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 420 pF
Resistencia drenaje-fuente RDS(on): 0.2 Ohm
Empaquetado / Estuche: SC65
Búsqueda de reemplazo de MOSFET 2SK3936
2SK3936 Datasheet (PDF)
1.1. 2sk3936.pdf 
Size:180K _toshiba
2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 ?A (VDS
4.1. 2sk3935.pdf Size:313K _toshiba
2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim
4.2. 2sk3934.pdf Size:288K _toshiba
2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta
4.3. 2sk3933-01l-s-sj.pdf Size:162K _fuji
2SK3933-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings E
4.4. 2sk3930-01l-s-sj.pdf Size:173K _fuji
2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T
4.5. 2sk3931.pdf Size:101K _fuji
2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent ci
4.6. 2sk3932.pdf Size:105K _fuji
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unl
Otros transistores... 2SK3864 , 2SK3868 , 2SK3879 , 2SK389 , 2SK3906 , 2SK3929-01MR , 2SK3931-01 , 2SK3932-01MR , 40673 , AP2308GEN-HF , AP2309AGN-HF , AP2309GEN-HF , AP2309GN-HF , AP2310AGN-HF , AP2310CGN-HF , AP2310GG-HF , AP2310GK-HF .
