2SK3936 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3936
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 420 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: SC65
Búsqueda de reemplazo de 2SK3936 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3936 datasheet
..1. Size:180K toshiba
2sk3936.pdf 
2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3936 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Fast reverse recovery time trr = 380 ns (typ.) Low drain-source ON-resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 16.5 S (typ.) Low leakage current IDS
..2. Size:286K inchange semiconductor
2sk3936.pdf
isc N-Channel MOSFET Transistor 2SK3936 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.1. Size:288K toshiba
2sk3934.pdf
2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3934 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.23 (typ.) High forward transfer admittance Yfs = 8.2 S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim
8.2. Size:313K toshiba
2sk3935.pdf
2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3935 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute
8.3. Size:101K fuji
2sk3931.pdf
2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent
8.4. Size:105K fuji
2sk3932.pdf
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
8.5. Size:173K fuji
2sk3930-01l-s-sj.pdf
2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T
8.6. Size:162K fuji
2sk3933-01l-s-sj.pdf
2SK3933-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings E
8.7. Size:356K inchange semiconductor
2sk3933-01s.pdf
isc N-Channel MOSFET Transistor 2SK3933-01S FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.8. Size:289K inchange semiconductor
2sk3931-01.pdf
isc N-Channel MOSFET Transistor 2SK3931-01 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.9. Size:282K inchange semiconductor
2sk3933-01l.pdf
isc N-Channel MOSFET Transistor 2SK3933-01L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.10. Size:280K inchange semiconductor
2sk3932-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3932-01MR FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.11. Size:356K inchange semiconductor
2sk3933-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3933-01SJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.12. Size:357K inchange semiconductor
2sk3930-01s.pdf
isc N-Channel MOSFET Transistor 2SK3930-01S FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.13. Size:283K inchange semiconductor
2sk3930-01l.pdf
isc N-Channel MOSFET Transistor 2SK3930-01L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.14. Size:279K inchange semiconductor
2sk3934.pdf
isc N-Channel MOSFET Transistor 2SK3934 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 300m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.15. Size:279K inchange semiconductor
2sk3935.pdf
isc N-Channel MOSFET Transistor 2SK3935 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.16. Size:357K inchange semiconductor
2sk3930-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3930-01SJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
Otros transistores... 2SK3864, 2SK3868, 2SK3879, 2SK389, 2SK3906, 2SK3929-01MR, 2SK3931-01, 2SK3932-01MR, IRFB31N20D, AP2308GEN-HF, AP2309AGN-HF, AP2309GEN-HF, AP2309GN-HF, AP2310AGN-HF, AP2310CGN-HF, AP2310GG-HF, AP2310GK-HF
