AP2310AGN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2310AGN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET AP2310AGN-HF

AP2310AGN-HF Datasheet (PDF)

..1. Size:58K ape
ap2310agn-hf.pdf

AP2310AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 65VD Small Package Outline RDS(ON) 80m Surface Mount Device ID 3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2310A series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

8.1. Size:56K ape
ap2310gg-hf.pdf

AP2310GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Srug

8.2. Size:49K ape
ap2310gk-hf.pdf

AP2310GK-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC

8.3. Size:93K ape
ap2310cgn-hf.pdf

AP2310CGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 75m Surface Mount Device ID 3.2AS Halogen Free & RoHS Compliant ProductSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible

8.4. Size:94K ape
ap2310gn-hf.pdf

AP2310GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 3AS RoHS CompliantSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely e

8.5. Size:68K ape
ap2310gn.pdf

AP2310GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

8.6. Size:1564K allpower
ap2310s.pdf

AIIP ERAP2310S DATA SHEET N-Channel pwer MOSFETDescriptinThe AP2310S uses advanced trench technol y to provide N} low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba eprotection or in other switching application. Schematic Diagram General Features 3A Vos =60V o =,lRos(ON}

8.7. Size:1490K cn vbsemi
ap2310gg.pdf

AP2310GGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

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