AP2312GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2312GN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 5 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AP2312GN
AP2312GN Datasheet (PDF)
ap2312gn.pdf
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ap2313gn.pdf
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ap2311gn.pdf
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ap2317gn-hf.pdf
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ap2311gn-hf.pdf
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ap2316gn.pdf
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ap2316gn-hf.pdf
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ap2310agn-hf.pdf
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ap2310gn-hf.pdf
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ap2313gn-hf.pdf
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ap2314gn-hf.pdf
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ap2310s.pdf
AIIP ERAP2310S DATA SHEET N-Channel pwer MOSFETDescriptinThe AP2310S uses advanced trench technol y to provide N} low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba eprotection or in other switching application. Schematic Diagram General Features 3A Vos =60V o =,lRos(ON}
ap2311gn.pdf
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ap2310gg.pdf
AP2310GGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
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