AP2312GN MOSFET: N-Ch, 20V, 4.3A. Full datasheet with pinout, specifications and replacement transistor list

AP2312GN Datasheet (PDF)

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AP2312GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50mD Surface mount package ID 4.3ASSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

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AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

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AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

Datasheet: AP2309GN-HF , AP2310AGN-HF , AP2310CGN-HF , AP2310GG-HF , AP2310GK-HF , AP2310GN-HF , AP2311GK-HF , AP2311GN-HF , EMB04N03H , AP2313GN-HF , AP2314GN-HF , AP2315GEN , AP2316GN-HF , AP2317GN-HF , AP2318AGEN-HF , AP2318GEN-HF , AP2319GN-HF .