AP2330GN-HF Todos los transistores

 

AP2330GN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2330GN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: SOT23
 

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AP2330GN-HF Datasheet (PDF)

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 ap2330gn-hf.pdf pdf_icon

AP2330GN-HF

AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toSachieve the lowest possible on-resistance,

 6.1. Size:175K  ape
 ap2330gn.pdf pdf_icon

AP2330GN-HF

AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAP2330 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

 9.1. Size:93K  ape
 ap2336gn-hf.pdf pdf_icon

AP2330GN-HF

AP2336GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext

 9.2. Size:177K  ape
 ap2338gn.pdf pdf_icon

AP2330GN-HF

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2338 series are from Advanced Power innovated design andsilicon process technology to achieve

MOSTRAR MÁS

Otros transistores... AP2321GN-HF , AP2323GN-HF , AP2324GN-HF , AP2325GEN-HF , AP2326GN-HF , AP2327GN-HF , AP2328GN-HF , AP2329GN-HF , IRFP460 , AP2331GN-HF , AP2332GEN-HF , AP2332GN-HF , AP2334GN-HF , AP2338GN-HF , AP2342GK-HF , AP2344GEN-HF , AP2344GN-HF .

History: WMO08N70EM | 4N65G-TMS2-T | BSC017N04NSG | 2SK3731 | STF6NK70Z | AON6454 | SI3476DV

 

 
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