2SK404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK404
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 2 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.8 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
   Paquete / Cubierta: SPA

Búsqueda de reemplazo de MOSFET 2SK404

2SK404 Datasheet (PDF)

..1. Size:78K sanyo
2sk404.pdf

Ordering number:EN1403AN-Channel Junction Silicon FET2SK404HF Amplifier, AF Amplifier ApplicationsFeatures Package Dimensions Large yfs.unit:mm Low noise.2034A Small Crss.[2SK404]2.24.00.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.0SANYO : SPA3.8nomSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con

0.1. Size:239K toshiba
2sk4042.pdf

2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4042 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

0.2. Size:254K sanyo
2sk4043ls.pdf

Ordering number : EN8642 2SK4043LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4043LSApplicationsFeatures Low ON-resistance. 2.5V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID

0.3. Size:530K fuji
2sk4047-01s.pdf

http://www.fujielectric.co.jp/products/semiconductor/index.html 2SK4047-01S Automotive FUJI POWER MOSFET Trench Power MOSFET (2nd Gen.) series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) 100% avalanche tested Gate (G) Applications Source (S) Automoti

0.4. Size:279K inchange semiconductor
2sk4042.pdf

isc N-Channel MOSFET Transistor 2SK4042FEATURESDrain Current : I =8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.97(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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