AP2530AGY-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2530AGY-HF

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.3(2.3) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5(8) nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072(0.15) Ohm

Encapsulados: SOT26

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AP2530AGY-HF datasheet

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 ap2530agy-hf.pdf pdf_icon

AP2530AGY-HF

AP2530AGY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Fast Switching Performance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A Advanced Power MOSFETs utilized advanced pr

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 ap2530agy.pdf pdf_icon

AP2530AGY-HF

AP2530AGY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Fast Switching Performance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A Advanced Power MOSFETs utilized advanced pr

 8.1. Size:189K  ape
 ap2530gy.pdf pdf_icon

AP2530AGY-HF

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Low On-resistance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A AP2530 series are from Advanced Power innovated desig

 8.2. Size:85K  ape
 ap2530gy-hf.pdf pdf_icon

AP2530AGY-HF

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Low On-resistance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A Advanced Power MOSFETs utilized advanced processing

MOSTRAR MÁS

Otros transistores... 2SK410, 2SK413, 2SK414, 2SK415, 2SK416L, 2SK416S, 2SK417, AP2451GY-HF, IRLB4132, AP2530GY-HF, AP2531GY, AP2532GY, AP2533GY-HF, AP2535GEY-HF, AP25N10GH-HF, AP25N10GJ-HF, AP25N10GP-HF