AP2532GY Todos los transistores

 

AP2532GY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2532GY
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4(1.8) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10(9) nS
   Cossⓘ - Capacitancia de salida: 70(63) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13(0.25) Ohm
   Paquete / Cubierta: SOT26
 

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AP2532GY Datasheet (PDF)

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 ap2532gy.pdf pdf_icon

AP2532GY

AP2532GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 130mD1 Surface Mount Package ID 2.4AG2S2P-CH BVDSS -30VSOT-26 G1RDS(ON) 250mDescription ID -1.8AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the

 9.1. Size:189K  ape
 ap2530gy.pdf pdf_icon

AP2532GY

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig

 9.2. Size:120K  ape
 ap2531gy.pdf pdf_icon

AP2532GY

AP2531GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the low

 9.3. Size:120K  ape
 ap2531gy-hf.pdf pdf_icon

AP2532GY

AP2531GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced proces

MOSTRAR MÁS

Otros transistores... 2SK415 , 2SK416L , 2SK416S , 2SK417 , AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , 8205A , AP2533GY-HF , AP2535GEY-HF , AP25N10GH-HF , AP25N10GJ-HF , AP25N10GP-HF , AP25N10GS-HF , AP25P15GI , AP25P15GS-HF .

History: 2SK2677

 

 
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