AP2603GY-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2603GY-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.5 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm

Encapsulados: SOT26

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AP2603GY-HF datasheet

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AP2603GY-HF

AP2603GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 65m G Surface Mount Device ID -5A D SOT-26 D RoHS Compliant & Halogen-Free D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

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AP2603GY-HF

AP2603GY Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V S D Small Package Outline RDS(ON) 65m D Surface Mount Device ID -5.0A G D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

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AP2603GY-HF

AP2607AGY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible

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AP2603GY-HF

AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possi

Otros transistores... AP2535GEY-HF, AP25N10GH-HF, AP25N10GJ-HF, AP25N10GP-HF, AP25N10GS-HF, AP25P15GI, AP25P15GS-HF, AP2602GY, AON7506, AP2604GY-HF, AP2605GY, AP2605GY0-HF, AP2606AGY-HF, AP2606GY-HF, AP2607AGY-HF, AP2607GY-HF, AP2608AGK-HF