AP2607GY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2607GY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT26

Búsqueda de reemplazo de MOSFET AP2607GY-HF

AP2607GY-HF Datasheet (PDF)

..1. Size:95K ape
ap2607gy-hf.pdf

AP2607GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible o

8.1. Size:95K ape
ap2607agy-hf.pdf

AP2607AGY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible

9.1. Size:130K ape
ap2605gy-hf.pdf

AP2605GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30VS Lower Gate Charge RDS(ON) 80mDD Small Footprint & Low Profile Package ID - 4AG RoHS CompliantDSOT-26DDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possi

9.2. Size:115K ape
ap2609gyt.pdf

AP2609GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer withDthe best combination of fast switching, ruggedized device de

9.3. Size:201K ape
ap2604gy.pdf

AP2604GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 45mG Small Footprint & Low Profile Package ID 5.5ADSOT-26 DDDescriptionAP2604 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest poss

9.4. Size:58K ape
ap2608gy.pdf

AP2608GYRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 150VD Lower Gate Charge RDS(ON) 2.6D Small Footprint & Low Profile Package ID 0.57AGDSOT-26 DDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible on-resistance, ex

9.5. Size:60K ape
ap2602gy-hf.pdf

AP2602GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VDD Lower On-resistance RDS(ON) 34mG Surface Mount Package ID 6.3AD RoHS Compliant & Halogen-Free SOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible o

9.6. Size:58K ape
ap2609gyt-hf.pdf

AP2609GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device d

9.7. Size:59K ape
ap2609gy-hf.pdf

AP2609GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 57mG Surface Mount Device ID - 5.1AD RoHS Compliant & Halogen-FreeSOT-26 DDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast swit

9.8. Size:207K ape
ap2605gy.pdf

AP2605GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30VS Lower Gate Charge RDS(ON) 80mDD Small Footprint & Low Profile Package ID - 4AG RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP2605 series are from Advanced Power innovated design and siliconDprocess

9.9. Size:164K ape
ap2602mt.pdf

AP2602MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Ultra Low On-resistance ID4 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP2602 series are from Advanced Power innovated design andsilicon process technology to ac

9.10. Size:95K ape
ap2606agy-hf.pdf

AP2606AGY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the

9.11. Size:163K ape
ap2606cmt.pdf

AP2606CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD SO-8 Compatible with Heatsink RDS(ON) 0.8m Ultra Low On-resistance ID4 280AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP2606C series are from Advanced Power innovated design andsilicon process technology to a

9.12. Size:137K ape
ap2604cdt.pdf

AP2604CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD 100% Rg & UIS Test RDS(ON) 0.65m Ultra Low On-resistance ID4 375AG RoHS Compliant & Halogen-FreeSPDFN 5x6DescriptionD D D DAP2604C series are from Advanced Power innovateddesign and silicon process technology to achi

9.13. Size:89K ape
ap2606gy-hf.pdf

AP2606GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7AGD RoHS CompliantDSOT-26DescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible

9.14. Size:60K ape
ap2603gy.pdf

AP2603GYPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VSD Small Package Outline RDS(ON) 65mD Surface Mount Device ID -5.0AGDSOT-26 DDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible on-resistance, extremely efficient

9.15. Size:57K ape
ap2608agy-hf.pdf

AP2608AGY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Small Footprint & Low Profile Package ID 0.78AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve

9.16. Size:55K ape
ap2605gy0-hf.pdf

AP2605GY0-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID -4AG RoHS Compliant & Halogen-FreeSSDDescriptionDAdvanced Power MOSFETs uti

9.17. Size:58K ape
ap2603gy-hf.pdf

AP2603GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 65mG Surface Mount Device ID -5ADSOT-26 D RoHS Compliant & Halogen-FreeDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

9.18. Size:96K ape
ap2604gy-hf.pdf

AP2604GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VSD Lower Gate Charge RDS(ON) 45mD Small Footprint & Low Profile Package ID 5.5AGDSOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext

9.19. Size:90K ape
ap2608agk-hf.pdf

AP2608AGK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Fast Switching Characteristic ID 0.92AG Halogen Free & RoHS Compliant ProductSDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theSbest combination of fast switc

9.20. Size:88K ape
ap2602gy.pdf

AP2602GYRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VSD Lower on-resistance RDS(ON) 34mD Surface mount package ID 6.3AGDSOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible on-resistance, extremely efficien

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