AP2626GY-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2626GY-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 3 V

Qgⓘ - Carga de la puerta: 3.2 nC

trⓘ - Tiempo de subida: 10.1 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: SOT26

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AP2626GY-HF datasheet

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 ap2626gy-hf.pdf pdf_icon

AP2626GY-HF

AP2626GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Simple Drive Requirement BVDSS 30V S1 D1 Smaller Outline Package RDS(ON) 72m G2 Surface mount package ID 3.3A S2 SOT-26 G1 RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs utilized advanced processing techniques D2 D1 to achieve the lo

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 ap2626gy.pdf pdf_icon

AP2626GY-HF

AP2626GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Simple Drive Requirement BVDSS 30V S1 D1 Smaller Outline Package RDS(ON) 72m G2 Surface mount package ID 3.3A S2 SOT-26 G1 RoHS Compliant & Halogen-Free Description AP2626 series are from Advanced Power innovated D2 D1 design and silicon process techn

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 ap2623gy-hf.pdf pdf_icon

AP2626GY-HF

AP2623GY-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge BVDSS -30V S1 D1 Low On-resistance RDS(ON) 170m G2 Surface Mount Package ID - 2A S2 RoHS Compliant & Halogen-Free SOT-26 G1 Description D2 D1 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest poss

 9.2. Size:59K  ape
 ap2625gy-hf.pdf pdf_icon

AP2626GY-HF

AP2625GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS -30V S1 D1 Capable of 2.5V Gate Drive RDS(ON) 185m G2 Surface Mount Package ID - 2A S2 SOT-26 RoHS Compliant & Halogen-Free G1 Description D2 D1 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest

MOSTRAR MÁS

Otros transistores... AP2613GYT-HF, AP2614GY-HF, AP2615GEY-HF, AP2615GY-HF, AP2616GY-HF, AP2622GY-HF, AP2623GY, AP2625GY, IRFZ24N, AP2732GK, AP2761I-A, AP2761I-H, AP2761I-H-HF, AP2761P-A, AP2761R-A, AP2761S-A-HF, AP2762I-A-HF