AP30P10GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30P10GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 89 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 50 nC

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 185 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TO252

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AP30P10GH-HF Datasheet (PDF)

1.1. ap30p10gh.pdf Size:185K _a-power

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS -100V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID -25A ▼ ▼ ▼ G ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ S Description AP30P10 series are from Advanced Power innovat

1.2. ap30p10gh-hf.pdf Size:96K _a-power

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS -100V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching Characteristic ID -25A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

2.1. ap30p10gs-hf.pdf Size:94K _a-power

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ Fast Switching Characteristic ID -25A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

2.2. ap30p10gi.pdf Size:151K _a-power

AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS -100V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and co

2.3. ap30p10gp.pdf Size:147K _a-power

AP30P10GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS -100V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID -25A ▼ ▼ ▼ G ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ S Description AP30P10 series are from Advanced Power innovat

2.4. ap30p10gs.pdf Size:93K _a-power

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS -100V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and co

2.5. ap30p10gp-hf.pdf Size:94K _a-power

AP30P10GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS -100V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching Characteristic ID -25A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

Otros transistores... AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W , AP30N30WI , BS170 , AP30P10GI , AP30P10GP-HF , AP30P10GS , AP30T03GH-HF , AP30T10GH-HF , AP30T10GI-HF , AP30T10GK-HF , AP30T10GM-HF .

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