AP30T10GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30T10GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: SO8

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AP30T10GM-HF datasheet

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 ap30t10gm-hf.pdf pdf_icon

AP30T10GM-HF

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process technol

 5.1. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T10GM-HF

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID3 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno

 6.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T10GM-HF

AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.2. Size:60K  ape
 ap30t10gk-hf.pdf pdf_icon

AP30T10GM-HF

AP30T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8A G Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

MOSTRAR MÁS

Otros transistores... AP30P10GH-HF, AP30P10GI, AP30P10GP-HF, AP30P10GS, AP30T03GH-HF, AP30T10GH-HF, AP30T10GI-HF, AP30T10GK-HF, IRFB4110, AP30T10GP-HF, AP30T10GS-HF, AP3310GH-HF, AP3310GJ-HF, AP3402GEH, AP3402GEJ, AP3403GH, AP3403GJ