Справочник MOSFET. AP30T10GM-HF

 

AP30T10GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP30T10GM-HF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 4.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 11.5 nC
   Время нарастания (tr): 6.5 ns
   Выходная емкость (Cd): 115 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
   Тип корпуса: SO8

 Аналог (замена) для AP30T10GM-HF

 

 

AP30T10GM-HF Datasheet (PDF)

 ..1. Size:58K  ape
ap30t10gm-hf.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process technol

 5.1. Size:181K  ape
ap30t10gm.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

 6.1. Size:59K  ape
ap30t10gs-hf.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.2. Size:60K  ape
ap30t10gk-hf.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

 6.3. Size:58K  ape
ap30t10gi-hf.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis

 6.4. Size:193K  ape
ap30t10gh.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAP30T10 series are from Advanced Power innovated design and GDSTO-252(H)silicon process technology to

 6.5. Size:163K  ape
ap30t10gi.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16AGSDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process technology to achie

 6.6. Size:167K  ape
ap30t10gs.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAP30T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

 6.7. Size:59K  ape
ap30t10gp-hf.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.8. Size:132K  ape
ap30t10gk.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching

 6.9. Size:59K  ape
ap30t10gh-hf.pdf

AP30T10GM-HF
AP30T10GM-HF

AP30T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSTO-252(H)best combination of fast sw

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top