AP4002S Todos los transistores

 

AP4002S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4002S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO263
 

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AP4002S Datasheet (PDF)

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 ap4002p ap4002s.pdf pdf_icon

AP4002S

AP4002S/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDSTO-263

 8.1. Size:60K  ape
 ap4002h j.pdf pdf_icon

AP4002S

AP4002H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AGSDescriptionGAP4002 series are specially designed as chopper regulator, DC/DC converter DSTO-251(J)and power drive application. The APEC MOSFET provid

 8.2. Size:94K  ape
 ap4002i-hf.pdf pdf_icon

AP4002S

AP4002I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP4002 series are specially designed as main switching devices forGDSuniversal 90~265VAC off-line AC/DC co

 8.3. Size:107K  ape
 ap4002t.pdf pdf_icon

AP4002S

AP4002TRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 400mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effec

MOSTRAR MÁS

Otros transistores... AP3R303GMT-HF , AP3R604AGH-HF , AP3R604GH-HF , AP3R604GMT-HF , AP4002H , AP4002I-HF , AP4002J , AP4002P , IRF530 , 2N3819 , 2SK427 , 2SK429S , 2SK429L , 2SK439 , 2SK443 , 2SK444 , 2SK445 .

History: AP99T06AGP-HF | 2SK1435

 

 
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