2N3819 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3819
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
Encapsulados: TO92
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2N3819 datasheet
2n3819.pdf
2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25
2n3819 2.pdf
2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v 8 25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise 3 dB @ 400 MHz D High Quality of Amplification D Sample-a
2n3819.pdf
2N3819 JFET VHF/UHF Amplifier N Channel Depletion MAXIMUM RATINGS http //onsemi.com Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc 3 DRAIN Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc 2 Drain Current ID 100 mAdc GATE Forward Gate Current IG(f) 10 mAdc Total Device Dissipation PD 1 SOURCE @ TA = 25 C 350 mW Derate above 25 C 2.8 mW/ C St
Otros transistores... AP3R604AGH-HF, AP3R604GH-HF, AP3R604GMT-HF, AP4002H, AP4002I-HF, AP4002J, AP4002P, AP4002S, IRFB3607, 2SK427, 2SK429S, 2SK429L, 2SK439, 2SK443, 2SK444, 2SK445, 2SK447
History: VBZE50P04
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