2N3819 Datasheet and Replacement
Type Designator: 2N3819
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
Package: TO92
2N3819 substitution
2N3819 Datasheet (PDF)
2n3819.pdf

2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25
2n3819 2.pdf

2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v 8 25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-a
2n3819.pdf

2N3819JFET VHF/UHF AmplifierNChannel DepletionMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc3 DRAINDrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25C 350 mWDerate above 25C 2.8 mW/CSt
Datasheet: AP3R604AGH-HF , AP3R604GH-HF , AP3R604GMT-HF , AP4002H , AP4002I-HF , AP4002J , AP4002P , AP4002S , AON7506 , 2SK427 , 2SK429S , 2SK429L , 2SK439 , 2SK443 , 2SK444 , 2SK445 , 2SK447 .
History: 2SK2411-Z
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History: 2SK2411-Z



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