2N3819 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N3819
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 300 Ohm
Package: TO92
2N3819 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N3819 Datasheet (PDF)
1.1. 2n3819-p.pdf 
Size:65K _philips
1.2. 2n3819.pdf Size:29K _fairchild_semi
2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 V VGS G
1.3. 2n3819 2.pdf Size:53K _vishay
2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v 8 25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise: 3 dB @ 400 MHz D High Quality of Amplification D Sample-and-Hold
1.4. 2n3819.pdf Size:170K _onsemi
2N3819 JFET VHF/UHF Amplifier NChannel Depletion MAXIMUM RATINGS http://onsemi.com Rating Symbol Value Unit DrainSource Voltage VDS 25 Vdc 3 DRAIN DrainGate Voltage VDG 25 Vdc GateSource Voltage VGS 25 Vdc 2 Drain Current ID 100 mAdc GATE Forward Gate Current IG(f) 10 mAdc Total Device Dissipation PD 1 SOURCE @ TA = 25C 350 mW Derate above 25C 2.8 mW/C Storage Channel Te
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