2SK492 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK492

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 2 V

|Id|ⓘ - Corriente continua de drenaje: 0.01 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 70 Ohm

Encapsulados: TO236 SC59

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2SK492 datasheet

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 2sk492.pdf pdf_icon

2SK492

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

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 2sk490.pdf pdf_icon

2SK492

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 9.2. Size:24K  hitachi
 2sk494.pdf pdf_icon

2SK492

2SK494 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline SPAK 1. Drain 1 2 2. Gate 3 3. Source 2SK494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 22 V Gate to source voltage VGSO 22 V Drain current ID 100 mA Gate current IG 10 mA Channel power dissipation Pch 300 mW Channel temperatu

Otros transistores... 2SK427, 2SK429S, 2SK429L, 2SK439, 2SK443, 2SK444, 2SK445, 2SK447, AO4407, 2SK494, 2SK511, 2SK512, 2SK522, 2SK525, 2SK526, 2SK530, 2SK531