2SK492 Specs and Replacement

Type Designator: 2SK492

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 2 V

|Id| ⓘ - Maximum Drain Current: 0.01 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 70 Ohm

Package: TO236 SC59

2SK492 substitution

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2SK492 datasheet

 ..1. Size:206K  isahaya
 2sk492.pdf pdf_icon

2SK492

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒

 9.1. Size:3846K  nec
 2sk490.pdf pdf_icon

2SK492

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 9.2. Size:24K  hitachi
 2sk494.pdf pdf_icon

2SK492

2SK494 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline SPAK 1. Drain 1 2 2. Gate 3 3. Source 2SK494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 22 V Gate to source voltage VGSO 22 V Drain current ID 100 mA Gate current IG 10 mA Channel power dissipation Pch 300 mW Channel temperatu... See More ⇒

Detailed specifications: 2SK427, 2SK429S, 2SK429L, 2SK439, 2SK443, 2SK444, 2SK445, 2SK447, AO4407, 2SK494, 2SK511, 2SK512, 2SK522, 2SK525, 2SK526, 2SK530, 2SK531

Keywords - 2SK492 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs