AP40N03GS Todos los transistores

 

AP40N03GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40N03GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO263
 

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AP40N03GS Datasheet (PDF)

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 ap40n03gs.pdf pdf_icon

AP40N03GS

AP40N03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGDS TO-263DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res

 6.1. Size:94K  ape
 ap40n03gp-hf.pdf pdf_icon

AP40N03GS

AP40N03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-FreeGTO-220DSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 6.2. Size:95K  ape
 ap40n03gp.pdf pdf_icon

AP40N03GS

AP40N03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGD TO-220SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-r

 6.3. Size:97K  ape
 ap40n03gh-hf ap40n03gj-hf.pdf pdf_icon

AP40N03GS

AP40N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID 36AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

MOSTRAR MÁS

Otros transistores... AP4034GH-HF , AP4034GM-HF , AP4034GMT-HF , AP4034GYT-HF , AP4036AGYT-HF , AP4085I , AP4085W , AP40N03GP , P60NF06 , AP40P03GH , AP40P03GI-HF , AP40P03GJ , AP40P03GP , AP40T03GH , AP40T03GI , AP40T03GJ , AP40T03GP .

History: 2SK2117 | IRF7478TR | AONS30306

 

 
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