AP40P03GJ Todos los transistores

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 ap40p03gj.pdf

AP40P03GJ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To

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 ap40p03gh-hf ap40p03gj-hf.pdf

AP40P03GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications an

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 ap40p03gi-hf.pdf

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 6.2. Size:216K  ape
 ap40p03gh.pdf

AP40P03GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt

 6.3. Size:166K  ape
 ap40p03gi.pdf

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description AP40P03 series are from Advanced Power innova

 6.4. Size:117K  ape
 ap40p03gp.pdf

AP40P03GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist

 6.5. Size:846K  cn vbsemi
 ap40p03gh.pdf

AP40P03GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A