AP40T10GP-HF Todos los transistores

 

AP40T10GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40T10GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 105 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

AP40T10GP-HF Datasheet (PDF)

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ap40t10gp-hf.pdf pdf_icon

AP40T10GP-HF

AP40T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

 5.1. Size:146K  ape
ap40t10gp.pdf pdf_icon

AP40T10GP-HF

AP40T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105VD Simple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS Compliant & Halogen-FreeSDescriptionAP40T10 series are from Advanced Power innova

 6.1. Size:55K  ape
ap40t10gh-hf.pdf pdf_icon

AP40T10GP-HF

AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGDAdvanced Power MOSFETs from APEC provide the designer withSTO-252(H)the best combination of fast switching, ru

 6.2. Size:93K  ape
ap40t10gr.pdf pdf_icon

AP40T10GP-HF

AP40T10GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

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