AP40T10GP-HF Todos los transistores

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 ap40t10gp-hf.pdf

AP40T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi

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 ap40t10gp.pdf

AP40T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105V D Simple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant & Halogen-Free S Description AP40T10 series are from Advanced Power innova

 6.1. Size:55K  ape
 ap40t10gh-hf.pdf

AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G D Advanced Power MOSFETs from APEC provide the designer with S TO-252(H) the best combination of fast switching, ru

 6.2. Size:93K  ape
 ap40t10gr.pdf

AP40T10GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist

 6.3. Size:212K  ape
 ap40t10gi.pdf

AP40T10GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Simple Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID3 40A G S Description AP40T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D resistance

 6.4. Size:94K  ape
 ap40t10gi-hf.pdf

AP40T10GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Single Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G D

 6.5. Size:197K  ape
 ap40t10gh.pdf

AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G AP40T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to achieve the

 6.6. Size:818K  cn vbsemi
 ap40t10gh.pdf

AP40T10GH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle