AP4224GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4224GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de AP4224GM MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP4224GM datasheet

 ..1. Size:96K  ape
ap4224gm.pdf pdf_icon

AP4224GM

AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 14m D1 D1 Dual N MOSFET Package ID 10A G2 RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast swit

 0.1. Size:95K  ape
ap4224gm-hf.pdf pdf_icon

AP4224GM

AP4224GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combinat

 8.1. Size:74K  ape
ap4224lgm-hf-pre.pdf pdf_icon

AP4224GM

AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of

 8.2. Size:226K  ape
ap4224lgm.pdf pdf_icon

AP4224GM

AP4224LGM Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 24m D1 Dual N MOSFET Package ID 7.1A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP4224 series are from Advanced Power innovated design and D2 D1 silicon process

Otros transistores... AP40T03GJ, AP40T03GP, AP40T03GS, AP40T10GH-HF, AP40T10GI-HF, AP40T10GP-HF, AP40T10GR, AP4224AGM, MMIS60R580P, AP4224LGM-HF, AP4226AGM, AP4226BGM-HF, AP4226GM, AP4228GM, AP4230GM-HF, AP4232AGM, AP4232BGM-HF