AP4226AGM Todos los transistores

 

AP4226AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4226AGM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO8
 

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AP4226AGM Datasheet (PDF)

 ..1. Size:206K  ape
 ap4226agm.pdf pdf_icon

AP4226AGM

AP4226AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.7AG2S2G1SO-8 S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic

 0.1. Size:94K  ape
 ap4226agm-hf.pdf pdf_icon

AP4226AGM

AP4226AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V Simple Drive Requirement RDS(ON) 18m Dual N MOSFET Package ID 8.7A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2designer with the best combination of fast switching,

 8.1. Size:71K  ape
 ap4226gm.pdf pdf_icon

AP4226AGM

AP4226GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.2AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the bes

 8.2. Size:57K  ape
 ap4226gm-hf.pdf pdf_icon

AP4226AGM

AP4226GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.2AG2S2 RoHS CompliantG1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchi

MOSTRAR MÁS

Otros transistores... AP40T03GS , AP40T10GH-HF , AP40T10GI-HF , AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AO3407 , AP4226BGM-HF , AP4226GM , AP4228GM , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP .

History: IXTQ42N25P | BUK472-100B | SSM3K16FV | SM6F03NSF | 2SJ119 | BSC12DN20NS3G | 2SJ382

 

 
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