AP4226BGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4226BGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SO8

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AP4226BGM-HF datasheet

 ..1. Size:98K  ape
 ap4226bgm-hf.pdf pdf_icon

AP4226BGM-HF

AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower On-resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 11m D1 Fast Switching Characteristic ID 10.7A G2 S2 Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the

 8.1. Size:206K  ape
 ap4226agm.pdf pdf_icon

AP4226BGM-HF

AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 8.2. Size:94K  ape
 ap4226agm-hf.pdf pdf_icon

AP4226BGM-HF

AP4226AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V Simple Drive Requirement RDS(ON) 18m Dual N MOSFET Package ID 8.7A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 designer with the best combination of fast switching,

 8.3. Size:71K  ape
 ap4226gm.pdf pdf_icon

AP4226BGM-HF

AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.2A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the bes

MOSTRAR MÁS

Otros transistores... AP40T10GH-HF, AP40T10GI-HF, AP40T10GP-HF, AP40T10GR, AP4224AGM, AP4224GM, AP4224LGM-HF, AP4226AGM, 60N06, AP4226GM, AP4228GM, AP4230GM-HF, AP4232AGM, AP4232BGM-HF, AP4232GM-HF, AP42T03GP, AP4405GM