AP4226BGM-HF Todos los transistores

 

AP4226BGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4226BGM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SO8
 

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AP4226BGM-HF Datasheet (PDF)

 ..1. Size:98K  ape
 ap4226bgm-hf.pdf pdf_icon

AP4226BGM-HF

AP4226BGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower On-resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 11mD1 Fast Switching Characteristic ID 10.7AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe

 8.1. Size:206K  ape
 ap4226agm.pdf pdf_icon

AP4226BGM-HF

AP4226AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.7AG2S2G1SO-8 S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic

 8.2. Size:94K  ape
 ap4226agm-hf.pdf pdf_icon

AP4226BGM-HF

AP4226AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V Simple Drive Requirement RDS(ON) 18m Dual N MOSFET Package ID 8.7A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2designer with the best combination of fast switching,

 8.3. Size:71K  ape
 ap4226gm.pdf pdf_icon

AP4226BGM-HF

AP4226GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.2AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the bes

MOSTRAR MÁS

Otros transistores... AP40T10GH-HF , AP40T10GI-HF , AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , IRFB7545 , AP4226GM , AP4228GM , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM .

History: FTP18N06N

 

 
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