AP4407GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4407GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 10.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 590 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de AP4407GM-HF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP4407GM-HF datasheet

 ..1. Size:208K  ape
 ap4407gm-hf.pdf pdf_icon

AP4407GM-HF

AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 14m D Fast Switching ID -10.7A G RoHS Compliant S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized d

 6.1. Size:170K  ape
 ap4407gm.pdf pdf_icon

AP4407GM-HF

AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement D D D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free S S SO-8 S D Description AP4407 series are from Advanced Pow

 7.1. Size:98K  ape
 ap4407gp-hf ap4407gs-hf.pdf pdf_icon

AP4407GM-HF

AP4407GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 7.2. Size:218K  ape
 ap4407gp ap4407gs.pdf pdf_icon

AP4407GM-HF

AP4407GS/P RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(

MOSTRAR MÁS

Otros transistores... AP4226GM, AP4228GM, AP4230GM-HF, AP4232AGM, AP4232BGM-HF, AP4232GM-HF, AP42T03GP, AP4405GM, IRF540N, AP4407GP, AP4407GS, AP4407I-HF, AP4409AGEM, AP4409GEM, AP4409GEP-HF, AP4410AGM, AP4410GM