AP4410AGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4410AGM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm

Encapsulados: SO8

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AP4410AGM datasheet

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 ap4410agm.pdf pdf_icon

AP4410AGM

AP4410AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 13.5m D D Fast Switching Characteristic ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d

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 ap4410agm-hf.pdf pdf_icon

AP4410AGM

AP4410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 13.5m D D Fast Switching Characteristic ID 10A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.1. Size:89K  ape
 ap4410m.pdf pdf_icon

AP4410AGM

AP4410M Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D D Fast Switching D RDS(ON) 13.5m D Simple Drive Requirement ID 10A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 8.2. Size:202K  ape
 ap4410gm.pdf pdf_icon

AP4410AGM

AP4410GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D D Fast Switching D RDS(ON) 13.5m D Simple Drive Requirement ID 10A G S S SO-8 S Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-

MOSTRAR MÁS

Otros transistores... AP4405GM, AP4407GM-HF, AP4407GP, AP4407GS, AP4407I-HF, AP4409AGEM, AP4409GEM, AP4409GEP-HF, IRLZ44N, AP4410GM, AP4411GM, AP4412GM, AP4413GM, AP4415GH, AP4415GJ, AP4415GM, AP4416GH