AP4410AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4410AGM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 155 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP4410AGM MOSFET
AP4410AGM Datasheet (PDF)
ap4410agm.pdf

AP4410AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d
ap4410agm-hf.pdf

AP4410AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of
ap4410m.pdf

AP4410MAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 30V DDFast Switching D RDS(ON) 13.5m DSimple Drive Requirement ID 10A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged
ap4410gm.pdf

AP4410GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VDD Fast Switching D RDS(ON) 13.5mD Simple Drive Requirement ID 10AGSSSO-8SDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-
Otros transistores... AP4405GM , AP4407GM-HF , AP4407GP , AP4407GS , AP4407I-HF , AP4409AGEM , AP4409GEM , AP4409GEP-HF , IRFP260N , AP4410GM , AP4411GM , AP4412GM , AP4413GM , AP4415GH , AP4415GJ , AP4415GM , AP4416GH .
History: HM2301D | APQ110SN5EA | CXDM3069N | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074
History: HM2301D | APQ110SN5EA | CXDM3069N | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074



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