AP4413GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4413GM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 11 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP4413GM MOSFET
- Selecciónⓘ de transistores por parámetros
AP4413GM datasheet
..1. Size:70K ape
ap4413gm.pdf 
AP4413GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D D Low On-resistance D RDS(ON) 30m D Fast Switching Characteristic ID -7.8A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the bes
0.1. Size:95K ape
ap4413gm-hf.pdf
AP4413GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D D D Low On-resistance RDS(ON) 30m D Fast Switching Characteristic ID -7.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.1. Size:70K ape
ap4411gm.pdf
AP4411GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 25m D Fast Switching ID -8.2A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.2. Size:67K ape
ap4412gm.pdf
AP4412GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 25V D D Simple Drive Requirement RDS(ON) 33m D D Fast Switching ID 7A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi
9.3. Size:99K ape
ap4417gh ap4417gj.pdf
AP4417GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -35V Simple Drive Requirement RDS(ON) 75m Fast Switching Characteristic ID -15A G RoHS Compliant S G Description D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and
9.4. Size:99K ape
ap4415gh ap4415gj.pdf
AP4415GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Low On-resistance RDS(ON) 36m Fast Switching Characteristic ID -24A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low voltage
9.5. Size:92K ape
ap4411gm-hf.pdf
AP4411GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Fast Switching Characteristic RDS(ON) 25m D RoHS Compliant & Halogen-Free ID -8.2A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged
9.6. Size:89K ape
ap4410m.pdf
AP4410M Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D D Fast Switching D RDS(ON) 13.5m D Simple Drive Requirement ID 10A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged
9.7. Size:57K ape
ap4410agm.pdf
AP4410AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 13.5m D D Fast Switching Characteristic ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d
9.8. Size:54K ape
ap4410agm-hf.pdf
AP4410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 13.5m D D Fast Switching Characteristic ID 10A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.9. Size:69K ape
ap4415gm.pdf
AP4415GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D D Low On-resistance D RDS(ON) 32m D Fast Switching Characteristic ID -7.3A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best
9.10. Size:59K ape
ap4416gh.pdf
AP4416GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 35V D Simple Drive Requirement RDS(ON) 45m Fast Switching Characteristic ID 20A G RoHS Compliant S Description G The TO-252 package is universally preferred for all commercial- D S TO-252(H) industrial surface mount applications an
9.11. Size:101K ape
ap4415gh-hf ap4415gj-hf.pdf
AP4415GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Low On-resistance RDS(ON) 36m Fast Switching Characteristic ID -24A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial surface G D S mount applications a
9.12. Size:202K ape
ap4410gm.pdf
AP4410GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D D Fast Switching D RDS(ON) 13.5m D Simple Drive Requirement ID 10A G S S SO-8 S Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-
9.13. Size:63K ape
ap4419gh ap4419gj.pdf
AP4419GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -35V Simple Drive Requirement RDS(ON) 38m Fast Switching Characteristic ID -25A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is universally preferred for all commercial- industrial surface mount application
9.14. Size:60K ape
ap4418gh ap4418gj.pdf
AP4418GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 35V D Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 33A G RoHS Compliant S Description G The TO-252 package is universally preferred for all commercial- D S TO-252(H) industrial surface mount applications an
Otros transistores... AP4407I-HF, AP4409AGEM, AP4409GEM, AP4409GEP-HF, AP4410AGM, AP4410GM, AP4411GM, AP4412GM, AO3400, AP4415GH, AP4415GJ, AP4415GM, AP4416GH, AP4417GH, AP4417GJ, AP4418GH, AP4418GJ
