AP4415GJ Todos los transistores

 

AP4415GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4415GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TO251
     - Selección de transistores por parámetros

 

AP4415GJ Datasheet (PDF)

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ap4415gh ap4415gj.pdf pdf_icon

AP4415GJ

AP4415GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Low On-resistance RDS(ON) 36m Fast Switching Characteristic ID -24AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low voltage

 0.1. Size:101K  ape
ap4415gh-hf ap4415gj-hf.pdf pdf_icon

AP4415GJ

AP4415GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Low On-resistance RDS(ON) 36m Fast Switching Characteristic ID -24AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for all commercial-industrial surfaceGDSmount applications a

 7.1. Size:69K  ape
ap4415gm.pdf pdf_icon

AP4415GJ

AP4415GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -35V DDLow On-resistance D RDS(ON) 32m DFast Switching Characteristic ID -7.3A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best

 9.1. Size:70K  ape
ap4411gm.pdf pdf_icon

AP4415GJ

AP4411GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -30V DDLow On-resistance D RDS(ON) 25m DFast Switching ID -8.2A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

Otros transistores... AP4409GEM , AP4409GEP-HF , AP4410AGM , AP4410GM , AP4411GM , AP4412GM , AP4413GM , AP4415GH , IRF630 , AP4415GM , AP4416GH , AP4417GH , AP4417GJ , AP4418GH , AP4418GJ , AP4419GH , AP4419GJ .

History: IXTP50N28T | 3SK249

 

 
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