AP4416GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4416GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AP4416GH

AP4416GH Datasheet (PDF)

..1. Size:59K ape
ap4416gh.pdf

AP4416GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 35VD Simple Drive Requirement RDS(ON) 45m Fast Switching Characteristic ID 20AG RoHS CompliantSDescriptionGThe TO-252 package is universally preferred for all commercial- DSTO-252(H)industrial surface mount applications an

9.1. Size:70K ape
ap4411gm.pdf

AP4411GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -30V DDLow On-resistance D RDS(ON) 25m DFast Switching ID -8.2A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

9.2. Size:67K ape
ap4412gm.pdf

AP4412GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 25VDD Simple Drive Requirement RDS(ON) 33mDD Fast Switching ID 7AG RoHS CompliantSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devi

9.3. Size:95K ape
ap4413gm-hf.pdf

AP4413GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VDDD Low On-resistance RDS(ON) 30mD Fast Switching Characteristic ID -7.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

9.4. Size:99K ape
ap4417gh ap4417gj.pdf

AP4417GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -35V Simple Drive Requirement RDS(ON) 75m Fast Switching Characteristic ID -15AG RoHS CompliantSGDescriptionDSTO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

9.5. Size:99K ape
ap4415gh ap4415gj.pdf

AP4415GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Low On-resistance RDS(ON) 36m Fast Switching Characteristic ID -24AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low voltage

9.6. Size:92K ape
ap4411gm-hf.pdf

AP4411GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Fast Switching Characteristic RDS(ON) 25mD RoHS Compliant & Halogen-Free ID -8.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

9.7. Size:89K ape
ap4410m.pdf

AP4410MAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 30V DDFast Switching D RDS(ON) 13.5m DSimple Drive Requirement ID 10A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

9.8. Size:57K ape
ap4410agm.pdf

AP4410AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

9.9. Size:54K ape
ap4410agm-hf.pdf

AP4410AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of

9.10. Size:69K ape
ap4415gm.pdf

AP4415GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -35V DDLow On-resistance D RDS(ON) 32m DFast Switching Characteristic ID -7.3A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best

9.11. Size:101K ape
ap4415gh-hf ap4415gj-hf.pdf

AP4415GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Low On-resistance RDS(ON) 36m Fast Switching Characteristic ID -24AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for all commercial-industrial surfaceGDSmount applications a

9.12. Size:202K ape
ap4410gm.pdf

AP4410GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VDD Fast Switching D RDS(ON) 13.5mD Simple Drive Requirement ID 10AGSSSO-8SDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-

9.13. Size:63K ape
ap4419gh ap4419gj.pdf

AP4419GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -35V Simple Drive Requirement RDS(ON) 38m Fast Switching Characteristic ID -25AG RoHS CompliantSDescription GDSTO-252(H)The TO-252 package is universally preferred for all commercial-industrial surface mount application

9.14. Size:70K ape
ap4413gm.pdf

AP4413GMPb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -20V DDLow On-resistance D RDS(ON) 30m DFast Switching Characteristic ID -7.8A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the bes

9.15. Size:60K ape
ap4418gh ap4418gj.pdf

AP4418GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 35VD Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 33AG RoHS CompliantSDescriptionGThe TO-252 package is universally preferred for all commercial- DSTO-252(H)industrial surface mount applications an

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