AP4418GJ Todos los transistores

 

AP4418GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4418GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO251
     - Selección de transistores por parámetros

 

AP4418GJ Datasheet (PDF)

 ..1. Size:60K  ape
ap4418gh ap4418gj.pdf pdf_icon

AP4418GJ

AP4418GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 35VD Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 33AG RoHS CompliantSDescriptionGThe TO-252 package is universally preferred for all commercial- DSTO-252(H)industrial surface mount applications an

 9.1. Size:70K  ape
ap4411gm.pdf pdf_icon

AP4418GJ

AP4411GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -30V DDLow On-resistance D RDS(ON) 25m DFast Switching ID -8.2A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

 9.2. Size:67K  ape
ap4412gm.pdf pdf_icon

AP4418GJ

AP4412GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 25VDD Simple Drive Requirement RDS(ON) 33mDD Fast Switching ID 7AG RoHS CompliantSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devi

 9.3. Size:95K  ape
ap4413gm-hf.pdf pdf_icon

AP4418GJ

AP4413GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VDDD Low On-resistance RDS(ON) 30mD Fast Switching Characteristic ID -7.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

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History: RQK0608BQDQS | IRFR120TR | MRF5003 | AONS36316 | CSD17309Q3 | 4N65KG-T60-K

 

 
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