AP4418GJ Todos los transistores

 

AP4418GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4418GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET AP4418GJ

 

Principales características: AP4418GJ

 ..1. Size:60K  ape
ap4418gh ap4418gj.pdf pdf_icon

AP4418GJ

AP4418GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 35V D Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 33A G RoHS Compliant S Description G The TO-252 package is universally preferred for all commercial- D S TO-252(H) industrial surface mount applications an

 9.1. Size:70K  ape
ap4411gm.pdf pdf_icon

AP4418GJ

AP4411GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 25m D Fast Switching ID -8.2A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of

 9.2. Size:67K  ape
ap4412gm.pdf pdf_icon

AP4418GJ

AP4412GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 25V D D Simple Drive Requirement RDS(ON) 33m D D Fast Switching ID 7A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

 9.3. Size:95K  ape
ap4413gm-hf.pdf pdf_icon

AP4418GJ

AP4413GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D D D Low On-resistance RDS(ON) 30m D Fast Switching Characteristic ID -7.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

Otros transistores... AP4413GM , AP4415GH , AP4415GJ , AP4415GM , AP4416GH , AP4417GH , AP4417GJ , AP4418GH , 8205A , AP4419GH , AP4419GJ , AP4420GH , AP4420GJ , AP4423GM-HF , AP4424AGM , AP4424GM , AP4425GM .

History: ZVN3310ASTOB | SVF12N60CF | IRF7331 | SIHG47N60AEF | PTP10HN10 | PTN3006

 

 
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