AP4429GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4429GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET AP4429GM-HF

AP4429GM-HF Datasheet (PDF)

..1. Size:93K ape
ap4429gm-hf.pdf

AP4429GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 5mD Fast Switching Characteristic ID 18AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

9.1. Size:171K ape
ap4423gm.pdf

AP4423GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4423 series are from

9.2. Size:60K ape
ap4426gm-hf.pdf

AP4426GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6.5mD Low On-resistance ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

9.3. Size:118K ape
ap4425go.pdf

AP4425GORoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Small & Thin Package D BVDSS -20VSSD Fast Switching Characteristic RDS(ON) 42mGS Capable of 1.8V Gate Drive ID -4.2ASTSSOP-8DDDescriptionGThe Advanced Power MOSFETs from APEC provide theSdesigner with the best combination of fast switching,ru

9.4. Size:93K ape
ap4424agm.pdf

AP4424AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi

9.5. Size:247K ape
ap4428gm.pdf

AP4428GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6mD Low On-resistance ID 16AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device de

9.6. Size:219K ape
ap4424gm.pdf

AP4424GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Low On-resistance RDS(ON) 9mD Fast Switching Characteristic ID 13.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

9.7. Size:197K ape
ap4427gm.pdf

AP4427GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDDD Fast Switching Characteristic RDS(ON) 6.6mD RoHS Compliant ID 16AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device des

9.8. Size:96K ape
ap4424gm-hf.pdf

AP4424GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Low On-resistance RDS(ON) 9mD Fast Switching Characteristic ID 13.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

9.9. Size:96K ape
ap4423gm-hf.pdf

AP4423GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of f

9.10. Size:170K ape
ap4426gm.pdf

AP4426GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6.5mD Low On-resistance ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4426 series are from A

9.11. Size:93K ape
ap4420gh ap4420gj.pdf

AP4420GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52AS RoHS CompliantDescriptionThe Advanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H

9.12. Size:197K ape
ap4425gm.pdf

AP4425GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDDD Fast Switching Characteristic RDS(ON) 9mD RoHS Compliant ID 13AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

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