AP4434AGH-HF Todos los transistores

 

AP4434AGH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4434AGH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO252

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AP4434AGH-HF Datasheet (PDF)

 0.1. Size:76K  ape
ap4434agh-hf-pre.pdf

AP4434AGH-HF
AP4434AGH-HF

AP4434AGH-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGThe Advanced Power MOSFETs from APEC provide theD

 6.1. Size:95K  ape
ap4434agm-hf.pdf

AP4434AGH-HF
AP4434AGH-HF

AP4434AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VDDD Capable of 1.8V Gate Drive RDS(ON) 22mD Fast Switching Characteristic ID 8.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

 6.2. Size:60K  ape
ap4434agyt-hf.pdf

AP4434AGH-HF
AP4434AGH-HF

AP4434AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8AGDSDDDescriptionDAP4434A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on

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