AP4434AGH-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4434AGH-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
TO252
AP4434AGH-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4434AGH-HF
Datasheet (PDF)
0.1. Size:76K ape
ap4434agh-hf-pre.pdf
AP4434AGH-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGThe Advanced Power MOSFETs from APEC provide theD
6.1. Size:95K ape
ap4434agm-hf.pdf
AP4434AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VDDD Capable of 1.8V Gate Drive RDS(ON) 22mD Fast Switching Characteristic ID 8.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
6.2. Size:60K ape
ap4434agyt-hf.pdf
AP4434AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8AGDSDDDescriptionDAP4434A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on
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