AP4435GJ-HF Todos los transistores

 

AP4435GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4435GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO251
 

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AP4435GJ-HF Datasheet (PDF)

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 ap4435gh-hf ap4435gj-hf.pdf pdf_icon

AP4435GJ-HF

AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 6.1. Size:214K  ape
 ap4435gh ap4435gj.pdf pdf_icon

AP4435GJ-HF

AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag

 6.2. Size:819K  cn vbsemi
 ap4435gj.pdf pdf_icon

AP4435GJ-HF

AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop

 7.1. Size:202K  ape
 ap4435gm-hf.pdf pdf_icon

AP4435GJ-HF

AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP4432GM , AP4433GM-HF , AP4434AGH-HF , AP4434AGM-HF , AP4434AGYT-HF , AP4434GH-HF , AP4434GM , AP4435GH-HF , IRFB3607 , AP4435GM-HF , AP4435GYT-HF , AP4436GM , AP4437GM-HF , AP4438AGM-HF , AP4438BGM-HF , AP4438CGM-HF , AP4438GM-HF .

History: AP4434GM | MMBFJ108

 

 
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