Справочник MOSFET. AP4435GJ-HF

 

AP4435GJ-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP4435GJ-HF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 44.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16.5 nC
   trⓘ - Время нарастания: 64 ns
   Cossⓘ - Выходная емкость: 195 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP4435GJ-HF

 

 

AP4435GJ-HF Datasheet (PDF)

 ..1. Size:100K  ape
 ap4435gh-hf ap4435gj-hf.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 6.1. Size:214K  ape
 ap4435gh ap4435gj.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag

 6.2. Size:819K  cn vbsemi
 ap4435gj.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop

 7.1. Size:202K  ape
 ap4435gm-hf.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 7.2. Size:54K  ape
 ap4435gm.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching Characteristic ID -9AGSSSO-8 SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

 7.3. Size:95K  ape
 ap4435gyt-hf.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device des

 7.4. Size:2937K  cn vbsemi
 ap4435gm.pdf

AP4435GJ-HF AP4435GJ-HF

AP4435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

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